Semiconductor device and manufacturing method thereof
US10615220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring that is provided on a first surface of the semiconductor substrate, an insulating layer provided on an inner surface of the through hole and a second surface of the semiconductor substrate, and a second wiring that is provided on a surface of the insulating layer and electrically connected to the first wiring in an opening. The surface of the insulating layer includes a first region, a second region, a third region, a fourth region that is curved to continuously connect the first and the second regions, and a fifth region that is curved to continuously connect the second and the third regions. An average inclination angle of the second region is smaller than that of the first region and is smaller than that of the inner surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.