Capacitor structures and methods for fabricating the same
US10615249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Jul 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor structure includes a first electrode plate disposed on a substrate, a first capacitor dielectric layer disposed on the first electrode plate, and a second electrode plate disposed on the first capacitor dielectric layer. A portion of the first electrode plate extends beyond an end of the second electrode plate to form a step. The capacitor structure also includes an etching stop layer, an inter-metal dielectric layer, a first via and a second via. The etching stop layer is disposed on the second electrode plate. The inter-metal dielectric layer covers the etching stop layer, the second electrode plate, the first capacitor dielectric layer and the first electrode plate. The first via penetrates through the inter-metal dielectric layer to contact the first electrode plate at the portion extending beyond the second electrode plate. The second via penetrates through the inter-metal dielectric layer to contact the second electrode plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.