Fin formation for semiconductor device
US10615255B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 12, 2016 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the unwanted fin to expose a fin spike; oxidizing the fin spike to form an oxidized semiconductor material; and removing the oxidized semiconductor material to expose a fin base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.