Patent · US Active

Semiconductor device, related manufacturing method, and related electronic device

US10615259B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2017
Grant dateApr 7, 2020
Priority date
Expiry dateApr 6, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/307
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.