Optoelectronic device with dielectric layer and method of manufacture

US10615304B2 · kind B2 · utility

Assignee

• ALTA DEVICES, INC. · US

Inventors

• Brendan M. Kayes · Los Angeles, US
• Melissa Archer · Mountain View, US
• Thomas J. Gmitter · Lakewood, US
• Gang He · Magnolia Trace, CA

Key dates

• Filing date: Dec 11, 2017
• Grant date: Apr 7, 2020
• Expiry date: Apr 3, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.