Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers
US10615574B2 · kind B2 · utility
0Cited by
10References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.