Patent · US Active

Non-linear high-frequency amplifier arrangement

US10615755B2 · kind B2 · utility

1Cited by

21References

9Claims

0Family size

Assignee

TRUMPF HUETTINGER GMBH + CO. KG · DE

Inventors

Andre Grede · Glückstadt, DE
Alexander Alt · Glückstadt, DE
Daniel Gruner · Müllheim, DE
Anton Labanc · Ehrenkirchen, DE

Key dates

Filing date	Dec 26, 2017
Grant date	Apr 7, 2020
Priority date	—
Expiry date	Sep 14, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH03F2200/451
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A non-linear high-frequency amplifier arrangement suitable for generating power outputs ≥1 kW at frequencies of ≥1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.