Patent · US Active

Thin film resistor

US10619227B2 · kind B2 · utility

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4Claims
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Inventor

Key dates

Filing dateJul 30, 2018
Grant dateApr 14, 2020
Priority date
Expiry dateNov 8, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01C17/12
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A thin film resistor has a higher resistivity compared to that of a conventional thin film resistor. The thin film resistor includes 30-45 at % of nickel, 15-30 at % of chromium, 1-10 at % of manganese, 10-30 at % of yttrium and 1-20 at % of tantalum.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.