Spin-based electrometry with solid-state defects
US10620251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2017 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/323
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Sensing the electric or strain field experienced by a sample containing a crystal host comprising of solid state defects under a zero-bias magnetic fields can yield a very sensitive measurement. Sensing is based on the spin states of the solid-state defects. Upon absorption of suitable microwave (and optical) radiation, the solid-state defects emit fluorescence associated with hyperfine transitions. The fluorescence is sensitive to electric and/or strain fields and is used to determine the magnitude and/or direction of the field of interest. The present apparatus is configured to control and modulate the assembly of individual components to maintain a zero-bias magnetic field, generate an Optically Detected Magnetic Resonance (ODMR) spectrum (with or without optical excitation) using appropriate microwave radiation, detect signals based on the hyperfine state transitions that are sensitive to electric/strain fields, and to quantify the magnitude and direction of the field of interest.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.