Thin film production
US10622162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process for producing a layer of a crystalline material, which process comprises disposing on a substrate: a first precursor compound comprising a first cation and a sacrificial anion, which first cation is a metal or metalloid cation and which sacrificial anion comprises two or more atoms; and a second precursor compound comprising a second anion and a second cation, which second cation can together with the sacrificial anion form a first volatile compound. The invention also relates to a layer of a crystalline material obtainable by a process according to the invention. The invention also provides a process for producing a semiconductor device comprising a process for producing a layer of a crystalline material according to the invention. The invention also provides a composition comprising: (a) a solvent; (b) NH4X; (c) AX; and (d) BY2 or MY4; wherein X, A, M and Y are as defined herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.