Method of producing an element of a microelectronic device
US10622210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Sep 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02645
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.