Fabrication of optical metasurfaces
US10622393B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Feb 4, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Feb 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The method is provided for fabricating an optical metasurface. The method may include depositing a conductive layer over a holographic region of a wafer and depositing a dielectric layer over the conducting layer. The method may also include patterning a hard mask on the dielectric layer. The method may further include etching the dielectric layer to form a plurality of dielectric pillars with a plurality of nano-scale gaps between the pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.