Patent · US Active

Image sensing device

US10622395B2 · kind B2 · utility

0Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 19, 2018
Grant dateApr 14, 2020
Priority date
Expiry dateJun 19, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/811

Abstract

An image sensing device includes a photoelectric device disposed within a semiconductor substrate, and a separation structure and electrode structures disposed within the semiconductor substrate, and surrounding the photoelectric device. The separation structure includes a first conductive pattern, and a first insulating spacer between the first conductive pattern and the semiconductor substrate. A respective one of the electrode structures includes a second conductive pattern, and a second insulating spacer between the second conductive pattern and the semiconductor substrate. The first conductive pattern and the second conductive pattern are formed of the same conductive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.