Semiconductor device
US10622402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.