Semiconductor device manufacturing method
US10622403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jul 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.