Method, process and fabrication technology for oxide layers
US10622495B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2015 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various substrates. The invention further relates to RTWCG method and process suited to grow thin films on the Si substrates used in the manufacture of silicon-based electronic and photonic (optoelectronic) device applications. The invention further relates to processes used to produce SiOX thin film layers for use as passivation layers, low reflectance layers, or high reflectance single layer coatings (SLARC) and selective emitters (SE).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.