Nitride underlayer and fabrication method thereof
US10622507B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.