Vertical type light emitting diode die and method for fabricating the same
US10622510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jun 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0365
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical type light emitting diode die and a method for fabricating the same is disclosed. A growth substrate is provided and an epitaxial layer is formed on the growth substrate. A metallic combined substrate is connected to the epitaxial layer. Then, the growth substrate is removed. Electrode units are formed on the top surface of the epitaxial layer. The epitaxial layer is divided into epitaxial dies according to the number of the plurality of electrode units. Each vertical type light emitting diode die formed in the abovementioned way includes the metallic combined substrate having a first metal layer and second metal layers. The first metal layer is combined with the two second metal layers by cutting, vacuum heating, and polishing, so as to enable the metallic combined substrate to have a high coefficient of thermal conductivity, a low coefficient of thermal expansion, and initial magnetic permeability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.