Light emitting device
US10622513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Sep 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.