Light-emitting diode with a mesa constructed from a unit cell
US10622518B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Dec 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light-emitting device includes an n-semiconductor structure, a p-semiconductor structure and a light-emitting active-region sandwiched therebetween. An n-trough is formed to expose the n-semiconductor structure by removing a first portion of the p-semiconductor structure and the light-emitting active-region. The n-trough surrounds a p-mesa which contains a second portion of the n-semiconductor structure, the p-semiconductor structure and the light-emitting active-region. The n-trough and the p-mesa are path-connected spaces and are formed via lithography and etching using a lithographic mask which is topologically constructed via merging a unit cell's at least two transformations selected from the unit cell's translation, rotation, and reflection transformations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.