Semiconductor light emitting device with increased reflectance and light emission efficiency, and suppressed peeling or migration of the reflective metal
US10622520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.