Gate voltage control circuit of insulated gate bipolar transistor and control method thereof
US10622986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | May 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.