Patent · US Active

Methods of reducing metal residue in edge bead region from metal-containing resists

US10627719B2 · kind B2 · utility

27Cited by
6References
23Claims
0Family size

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Key dates

Filing dateAug 11, 2017
Grant dateApr 21, 2020
Priority date
Expiry dateAug 11, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67051
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.