Patent · US Active

Flash memory testing according to error type pattern

US10628247B2 · kind B2 · utility

0Cited by

4References

12Claims

0Family size

Assignee

SOLID STATE STORAGE TECHNOLOGY CORPORATION · TW

Inventors

Tsung-Hung Wu · Taipei, TW
Sin-Yu Lin · Taipei, TW

Key dates

Filing date	Mar 15, 2018
Grant date	Apr 21, 2020
Priority date	—
Expiry date	Nov 17, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2207/2245
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A storage method comprises storing a retry table; wherein the retry table recites a plurality of error type patterns, the error type patterns comprises a plurality of default error types; accessing data stored in the flash memory; wherein an access error caused when a control circuit reads the data, the control circuit reads the retry table and performs testing according to the error type patterns sequentially to determine a current error type of the access error, and the control circuit performs an adjusted accessing action according to the current error type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.