Method for selectively etching silicon oxide film
US10629450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for selectively etching a silicon oxide film in a semiconductor manufacturing process and comprises: a step of introducing a substrate having a silicon nitride film and a silicon oxide film to a substrate support part inside a reactor; a step of heating the substrate introduced into the reactor, so as to maintain a first temperature; a first step of supplying halogen gas and basic gas to the inside of the reactor, while the first temperature is maintained, so as to be reacted with the silicon oxide film formed on the substrate, thereby forming a reaction product on the substrate; a second step of heating the substrate, having the reaction product, up to a second temperature so as to remove the reaction product; a third step of cooling the temperature of the substrate down to the first temperature; and a step of repetitively performing the first step to the third step a preset number of times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.