LTPS layer, method for fabricating the same, display substrate and display device
US10629638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Dec 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a LTPS layer, a LTPS layer, a display substrate, and a display device are disclosed. The method includes providing a substrate which comprises a driver thin film transistor region and a non-driver thin film transistor region; depositing an amorphous silicon layer on the substrate; and irradiating the amorphous silicon layer with a laser beam to crystalline the amorphous silicon layer, wherein a scanning parameter with which the laser beam irradiates the amorphous silicon layer in the driver thin film transistor region is different from a scanning parameter with which the laser beam irradiates the amorphous silicon layer in the non-driver thin film transistor region. The driver and non-driver thin film transistor regions are processed in a differentiated manner with different scanning parameters. The amorphous silicon layer in the driver thin film transistor region is crystallized into a the grain size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.