Semiconductor device having overlapping semiconductor patterns and method of fabricating the same
US10629705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2017 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Oct 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
Abstract
A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.