Unidirectional ESD protection with buried breakdown thyristor device
US10629715B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Aug 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge protection device includes a substrate, first and second emitter regions disposed in the substrate, laterally spaced from one another on a side of the substrate, and having opposite conductivity types, and first and second base regions having opposite conductivity types and in which the first and second emitter regions are disposed in a thyristor arrangement, respectively. The first base region includes a buried doped layer that extends under the second base region. Each of the buried doped layer and the second base region includes a respective non-uniformity in dopant concentration profile. A spacing between the buried doped layer and the second base region at the respective non-uniformities establishes a breakdown trigger voltage for the thyristor arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.