Semiconductor device and method of fabricating the same
US10629742B2 · kind B2 · utility
1Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Jul 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.