Thin film transistor, manufacturing method thereof, array substrate and manufacturing method thereof

US10629747B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Cuili Gai · Beijing, CN
• Ling Wang · Beijing, CN
• Baoxia Zhang · Beijing, CN

Key dates

• Filing date: Jan 4, 2018
• Grant date: Apr 21, 2020
• Expiry date: Jan 4, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A thin film transistor, a manufacturing method of the thin film transistor, an array substrate and a manufacturing method of the array substrate are provided. The thin film transistor includes a base substrate, a metal light-shielding layer and a first active layer which are on the base substrate, and a spacer layer between the first active layer and the metal light-shielding layer; the first active layer includes a channel region, and the spacer layer is between the channel region and the metal light-shielding layer.