Method for manufacturing ultraviolet photodetector based on Ga2O3 material
US10629766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Aug 31, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an ultraviolet photodetector based on Ga2O3 material are provided. The method includes: selecting a substrate; forming a Ga2O3 layer on an upper surface of the substrate; forming a top electrode on the Ga2O3 layer; and forming a bottom electrode on a lower surface of the substrate. Ga2O3 material is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The Ga2O3 material is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.