Thin film transistor, method for preparing the same, and display device

US10629834B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Song Liu · San Jose, US
• Yu Wen · Taipei, TW
• Jianming Sun · Beijing, CN
• Zhengliang Li · Beijing, CN
• Xiaochen Ma · Beijing, CN
• Hehe HU · Beijing, CN
• Wenlin Zhang · Nanhu, CN
• Jianhua Du · Beijing, CN
• Ce Ning · Beijing, CN

Key dates

• Filing date: Aug 28, 2018
• Grant date: Apr 21, 2020
• Expiry date: Aug 28, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.