Patent · US Active

Single crystal piezoelectric RF resonators and filters with improved cavity definition

US10630259B2 · kind B2 · utility

5Cited by
2References
25Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 5, 2018
Grant dateApr 21, 2020
Priority date
Expiry dateJul 12, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2003/021
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An FBAR filter device comprising an array of resonators, each resonator comprising a single crystal piezoelectric layer sandwiched between a first and a second metal electrode,wherein the first electrode is supported by a support membrane over an air cavity, the air cavity being embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by barriers of a material that is resistant to silicon oxide etchants, and wherein the interface between the support membrane and the first electrode is smooth and flat.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.