Sensor misalignment measuring device
US10634483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2017 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Oct 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.