Method for forming perovskite layers using atmospheric pressure plasma
US10636632B2 · kind B2 · utility
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2References
15Claims
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Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Apr 3, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.