Wafer-scale synthesis of large-area black phosphorus material heterostructures
US10636654B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 6, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Apr 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.