Method for manufacturing semiconductor devices and structures thereof
US10636667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Sep 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.