Dischargeable electrical programmable read only memory (EPROM) cell
US10636800B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Jan 29, 2015 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | May 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
Abstract
The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.