Semiconductor device

US10636898B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventor

• Ryohei GEJO · Kawasaki, JP

Key dates

• Filing date: Nov 29, 2018
• Grant date: Apr 28, 2020
• Expiry date: Nov 29, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/406

Abstract

A semiconductor device includes a first semiconductor layer, a second semiconductor layer selectively provided on the first semiconductor layer, a third semiconductor layer selectively provided on the second semiconductor layer, and a control electrode facing a portion of the second semiconductor layer via a first insulating film. The device further includes a fourth semiconductor layer provided on a lower surface side of the first semiconductor layer, a fifth semiconductor layer arranged with the fourth semiconductor layer along a lower surface of the first semiconductor layer, and a sixth semiconductor layer provided between the first and fifth semiconductor layers. The sixth semiconductor layer is connected to the fourth semiconductor layer. The device includes a connecting portion positioned between the first and fifth semiconductor layers. The connecting portion electrically connects the fifth semiconductor layer to the first semiconductor layer, and the sixth semiconductor layer is not provided at the connecting portion.