Patent · US Active

Method for producing a substrate, substrate, metal-oxide-semiconductor field-effect transistor with a substrate, micro-electromechanical system with a substrate, and motor vehicle

US10636901B2 · kind B2 · utility

0Cited by

3References

5Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Achim Trautmann · Leonberg, DE
Christian Tobias Banzhaf · Laichingen, DE

Key dates

Filing date	Aug 7, 2014
Grant date	Apr 28, 2020
Priority date	—
Expiry date	Feb 11, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system includes dry etching a preliminary trench into the substrate by using a structured first masking layer. The substrate includes a silicon carbide layer, and the dry etching is carried out in such a way that a remnant of the first structured masking layer remains. The method further includes applying a second masking layer at least to walls of the preliminary trench and dry etching by using the remnant of the first masking layer and the second masking layer so as to produce a trench with a step in the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.