High electron mobility thin film transistors

US10636916B2 · kind B2 · utility

Inventors

• Ishiang Shih · Brossard, CA
• Cindy X. Qiu · Brossard, CA
• Chunong Qiu · Brossard, CA
• Andy Shih · Brossard, CA
• Julia Qiu · Brossard, CA
• Yi-Chi Shih · Los Angeles, US

Key dates

• Filing date: Sep 5, 2018
• Grant date: Apr 28, 2020
• Expiry date: Sep 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In still another embodiment, HEM-TFTs with a double heterojunction structure are provided to include a substrate, a first barrier layer, a first doped layer, a first spacer layer, a first metal oxynitride channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain …