Single electron transistor triggered by photovoltaic diode
US10636918B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A single photon detection circuit is described that includes a germanium photodiode that is configured with zero voltage bias to avoid dark current output when no photon input is present and also is configured to respond to a single photon input by generating a photovoltaic output voltage. A single electron bipolar avalanche transistor (SEBAT) has a base emitter junction connected in parallel with the germanium photodiode and is configured so that the photovoltaic output voltage triggers an avalanche collector current output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.