Method and device for passivating defects in semiconductor substrates

US10636934B2 · kind B2 · utility

Assignee

• CENTROTHERM INTERNATIONAL AG · DE

Inventors

• Thomas Pernau · Bad Dürrheim, DE
• Peter Völk · Dresden, DE
• Hans-Peter Elser · Erbach, DE
• Wolfgang Scheiffele · Erbach, DE
• Andreas Reichart · Berghülen, DE
• Olaf Romer · Leipzig, DE
• Wolfgang Jooss · Konstanz, DE

Key dates

• Filing date: Sep 20, 2016
• Grant date: Apr 28, 2020
• Expiry date: Sep 20, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to methods and an apparatus for passivating defects of a semiconductor substrate, in particular a silicon based solar cell. According to the method, the substrate is irradiated with electromagnetic radiation during a first process phase, wherein the radiation directed onto the substrate has wavelengths at least in the region below 1200 nm and an intensity of at least 8000 Watt/m2. This can lead to a heating of the substrate, or a temperature control can be provided. Subsequently, the substrate is irradiated with electromagnetic radiation during a temperature-holding phase following the first process phase, wherein the radiation directed onto the substrate has wavelengths primarily in the region below 1200 nm and an intensity of at least 8000 Watt/m2, while a side of the substrate facing away from a source of the electromagnetic radiation is cooled via a contact with a support cooled by a cooling device.