Wideband biasing of high power amplifiers
US10637405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Aug 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) amplifier circuit includes an amplifier device and a first baseband bias circuit. The amplifier device includes a first input configured to receive a first signal to be amplified and a first output configured to output a first amplified signal. The first baseband bias circuit includes an input coupled to the first output of the amplifier device. The first baseband bias circuit includes a first envelope decoupling circuit and a first harmonic decoupling circuit. The first envelope decoupling circuit includes a first bulk capacitor and a first distributed inductor configured to resonate in a baseband frequency range. The first harmonic decoupling circuit includes a second bulk capacitor and a second distributed inductor configured to resonate at a harmonic frequency of the frequency of the first signal received at the input of the amplifier device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.