CMP compositions selective for oxide and nitride with improved dishing and pattern selectivity
US10640679B2 · kind B2 · utility
0Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.