Patent · US Active

Wet etching machine and etching method using the same

US10643866B2 · kind B2 · utility

0Cited by
4References
9Claims
0Family size

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Inventors

Key dates

Filing dateApr 21, 2016
Grant dateMay 5, 2020
Priority date
Expiry dateApr 21, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/6776
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a wet etching machine and an etching method. The wet etching machine including an etching chamber in which at least two etching layers are disposed. The etching layers are successively overlapped with each other from up to down, and each etching layer includes a first transfer carrier for receiving and transferring a substrate to be etched and a spraying apparatus disposed right above the first transfer carrier for spraying etching solution. When the total etching time is needed to be longer than the transfer time of the substrate without stopping the substrate, the present disclosure can solve the problems in the prior art of causing the takt time decreased due to the stopping time of the substrate is required to be increased or causing the area of the facility increased due to the number of the etching chambers connected in series is required to be increased.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.