Nitrogen assisted oxide gapfill
US10643946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jun 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment includes a dielectric material; a trench included in the dielectric material, the trench having first and second opposing sidewalls; wherein the trench includes: (a)(i) a first trench portion extending from the first sidewall to the second sidewall, (a)(ii) a second trench portion extending from the first sidewall to the second sidewall, and (a)(iii) a third trench portion extending from the first sidewall to the second sidewall; wherein the second trench portion is between the first trench portion and the third trench portion; wherein the first trench portion is substantially filled with a first material, the second trench portion is substantially filled with a second material, and the third trench portion is substantially filled with a third material; wherein (b)(i) the first material includes nitrogen, and (b)(ii) the first material includes more nitrogen than the third material. Other embodiments are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.