Compound semiconductor monolithic integrated circuit device with transistors and diodes
US10643993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2019 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Mar 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A compound semiconductor monolithically integrated circuit device with transistors and diodes comprises a compound semiconductor substrate, a transistor epitaxial structure, a transistor upper structure, a first diode, and a second diode. The transistor epitaxial structure forms on the compound semiconductor substrate. The first diode, the second diode, and the transistor upper structure form on a first part, a second part, and a third part of the transistor epitaxial structure, respectively. The transistor upper structure and the third part of the transistor epitaxial structure form a transistor. The first diode comprises a first part of an n-type doped epitaxial layer, a first part of a first intrinsic epitaxial layer, a first electrode, and a second electrode. The second diode comprises a second part of the n-type doped epitaxial layer, a second part of the first intrinsic epitaxial layer, a first electrode, and a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.