Photoelectric conversion apparatus including silicon oxide film and silicon nitride layers, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus
US10644055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jul 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.