Layered structure and semiconductor device including layered structure
US10644115B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2019 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Feb 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ω-scan X-ray diffraction (XRD) measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.